IXGN82N120C3H1 Datasheet - IXYS Corporation

IXGN82N120C3H1 High-Speed PT IGBT

Advance Technical Information GenX3TM 1200V IGBT w/ Diode High-Speed PT IGBT for 20-50 kHz Switching IXGN82N120C3H1 VCES IC110 VCE(sat) = 1200V = 58A ≤£ 3.9V SOT-227B, miniBLOC E153432 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight 50/60Hz IISOL ≤ 1mA t = 1min t = 1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC TC TC TC = 25°C = 110°C = 110°C = 25°C, 1ms Maximum Ratings 1200 1200 ±20 ±30 130 58 42 500 I.

IXGN82N120C3H1 Features

* z z z z z z V V V V A A A A A Ec G Ec C G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load TC = 25°C Mounting Torque Terminal Connection Torque Optimized for Low Switching Losses Square RBS

IXGN82N120C3H1-IXYSCorporation.pdf