IXGN82N120C3H1 Datasheet - IXYS Corporation

IXGN82N120C3H1, High-Speed PT IGBT

Advance Technical Information GenX3TM 1200V IGBT w/ Diode High-Speed PT IGBT for 20-50 kHz Switching IXGN82N120C3H1 VCES IC110 VCE(sat) = 1200V = .

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IXGN82N120C3H1-IXYSCorporation.pdf

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Datasheet Details

Part number:

IXGN82N120C3H1

Manufacturer:

IXYS Corporation

File Size:

170.28 KB

Description:

High-Speed PT IGBT

Features

* z z z z z z V V V V A A A A A Ec G Ec C G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load TC = 25°C Mounting Torque Terminal Connection Torque Optimized for Low Switching Losses Square RBS

Applications

* z z z z z z Power Inverters UPS SMPS PFC Circuits Welding Machines Lamp Ballasts © 2009 IXYS CORPORATION, All Rights Reserved DS100171(7/09) http://www. Datasheet4U. com IXGN82N120C3H1 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon t

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IXGN82N120C3H1 High-Speed IGBT IXYS Corporation

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