* z z z z z z V V V V A A A A A Ec G Ec C G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load TC = 25°C Mounting Torque Terminal Connection Torque Optimized for Low Switching Losses Square RBS
IXGN82N120C3H1 Datasheet (170.28 KB)
IXGN82N120C3H1
IXYS Corporation
170.28 KB
High-speed pt igbt.
Advance Technical Information
GenX3TM 1200V IGBT w/ Diode
High-Speed PT IGBT for 20-50 kHz Switching
IXGN82N120C3H1
VCES IC110 VCE(sat)
= 1200V = .
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V CES
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.
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Advanced Technical Data
IGBT
Optimized for Switching
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IXGN 80N60A2 IXGN 80N60A2D1
VCES = IC25 = VCE(sat) =
600 V 160 A 1.35 V
Symbol
.
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IGBT
Optimized for Switching
up to 5 kHz
IXGN 80N60A2 IXGN 80N60A2D1
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Symbol
.
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V CE(sat)
3.0V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM
SSOA (RBSOA)
tsc (SCSOA)
PC .
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(IXYS)
GenX3TM 600V IGBT
IXGN120N60A3 IXGN120N60A3D1
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Symbol VCES VCGR VGES VGEM IC25 IC110 I
F110
I
CM
SS.
IXGN120N60A3D1 - IGBT
(IXYS)
GenX3TM 600V IGBT
IXGN120N60A3 IXGN120N60A3D1
Ultra-low Vsat PT IGBTs for up to 5kHz switching
Symbol VCES VCGR VGES VGEM IC25 IC110 I
F110
I
CM
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IXGN200N170 - High Voltage IGBT
(IXYS)
High Voltage IGBT
Advance Technical Information
IXGN200N170
VCES = 1700V
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V CE(sat)
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tfi(typ) = 535ns
E
Symbol
VCES VCGR.
IXGN200N60 - HiPerFAST IGBT
(IXYS Corporation)
HiPerFASTTM IGBT
IXGN 200N60 IXGN 200N60A
VCES 600 V 600 V
IC25 200 A 200 A
VCE(sat) 2.5 V 2.7 V
E
..
Symbol VCES VCGR
Test Co.
