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IXGN80N60A2D1 Datasheet - IXYS

IXGN80N60A2D1 IGBT

Advanced Technical Data IGBT Optimized for Switching up to 5 kHz IXGN 80N60A2 IXGN 80N60A2D1 VCES = IC25 = VCE(sat) = 600 V 160 A 1.35 V Symbol Test Conditions VCES VCGR TJ TJ VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) = 25°C to 150°C = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1 ms IXGN80N60A2D1 VGE = 15 V, TVJ = 125°C, RG = 2.0 Ω Clamped inductive load PC TJ TJM Tstg VISOL Md TC = 25°C 50/60 Hz IISOL ≤ 1 mA t = 1 min t=1s Mou.

IXGN80N60A2D1 Features

* International standard package miniBLOC UL recognized Aluminium nitride isolation - high power dissipation Isolation voltage 3000 V~ Very high current IGBT Low VCE(sat) for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Low collector-to-case capacitance (< 50 pF) Low package

IXGN80N60A2D1 Datasheet (520.66 KB)