* International standard package miniBLOC UL recognized Aluminium nitride isolation - high power dissipation Isolation voltage 3000 V~ Very high current IGBT Low VCE(sat) for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Low collector-to-case capacitance (< 50 pF) Low package
IXGN80N60A2 Datasheet (520.66 KB)
IXGN80N60A2
IXYS
520.66 KB
Igbt.
Advanced Technical Data
IGBT
Optimized for Switching
up to 5 kHz
IXGN 80N60A2 IXGN 80N60A2D1
VCES = IC25 = VCE(sat) =
600 V 160 A 1.35 V
Symbol
.
📁 Related Datasheet
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(IXYS)
Advanced Technical Data
IGBT
Optimized for Switching
up to 5 kHz
IXGN 80N60A2 IXGN 80N60A2D1
VCES = IC25 = VCE(sat) =
600 V 160 A 1.35 V
Symbol
.
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Advance Technical Information
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IXGN82N120B3H1
High-Speed Low-Vsat PT IGBT for 3-20 kHz Switching
V CES
I C110
VCE(sat)
.
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High-Speed PT IGBT for 20-50 kHz Switching
IXGN82N120C3H1
VCES IC110 VCE(sat)
= 1200V = .
IXGN100N170 - High Voltage IGBT
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High Voltage IGBT
IXGN100N170
VCES = 1700V
IC90 = 95A
V CE(sat)
3.0V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM
SSOA (RBSOA)
tsc (SCSOA)
PC .
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(IXYS)
GenX3TM 600V IGBT
IXGN120N60A3 IXGN120N60A3D1
Ultra-low Vsat PT IGBTs for up to 5kHz switching
Symbol VCES VCGR VGES VGEM IC25 IC110 I
F110
I
CM
SS.
IXGN120N60A3D1 - IGBT
(IXYS)
GenX3TM 600V IGBT
IXGN120N60A3 IXGN120N60A3D1
Ultra-low Vsat PT IGBTs for up to 5kHz switching
Symbol VCES VCGR VGES VGEM IC25 IC110 I
F110
I
CM
SS.
IXGN200N170 - High Voltage IGBT
(IXYS)
High Voltage IGBT
Advance Technical Information
IXGN200N170
VCES = 1700V
IC90 = 160A
V CE(sat)
2.6V
tfi(typ) = 535ns
E
Symbol
VCES VCGR.
IXGN200N60 - HiPerFAST IGBT
(IXYS Corporation)
HiPerFASTTM IGBT
IXGN 200N60 IXGN 200N60A
VCES 600 V 600 V
IC25 200 A 200 A
VCE(sat) 2.5 V 2.7 V
E
..
Symbol VCES VCGR
Test Co.
