IXGN82N120B3H1 Datasheet - IXYS

IXGN82N120B3H1 High-Speed Low-Vsat PT IGBT

Advance Technical Information GenX3TM 1200V IGBT w/ Diode IXGN82N120B3H1 High-Speed Low-Vsat PT IGBT for 3-20 kHz Switching V CES I C110 VCE(sat) = 1200V = 64A ≤£ 3.2V Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load T.

IXGN82N120B3H1 Features

* z Optimized for Low Conduction and Switching Losses z Square RBSOA z High Current Capability z Isolation Voltage 2500V~ z Anti-Parallel Ultra Fast Diode z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z SMPS z PFC Cir

IXGN82N120B3H1-IXYS.pdf