* z Optimized for Low Conduction and Switching Losses z Square RBSOA z High Current Capability z Isolation Voltage 2500V~ z Anti-Parallel Ultra Fast Diode z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z SMPS z PFC Cir
IXGN82N120B3H1 Datasheet (247.35 KB)
IXGN82N120B3H1
IXYS
247.35 KB
High-speed low-vsat pt igbt.
Advance Technical Information
GenX3TM 1200V IGBT w/ Diode
IXGN82N120B3H1
High-Speed Low-Vsat PT IGBT for 3-20 kHz Switching
V CES
I C110
VCE(sat)
.
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Symbol
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E
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Test Co.
