IXTQ250N075T Datasheet, Mosfet, IXYS Corporation

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Part number:

IXTQ250N075T

Manufacturer:

IXYS Corporation

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194.83kb

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📄 Datasheet

Description:

Power mosfet.

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IXTQ250N075T

IXYS Corporation

📁 Related Datasheet

IXTQ250N075T - N-ChannelMOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4mΩ(Max) ·Fast Switc.

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6mΩ(Max) ·Fast Switc.

IXTQ200N06P - Power MOSFET (IXYS)
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IXTQ200N075T - Power MOSFET (IXYS Corporation)
Preliminary Technical Information Trench Gate Power MOSFET IXTH200N075T IXTQ200N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(.

IXTQ200N075T - N-ChannelMOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5mΩ(Max) ·Fast Switc.

IXTQ200N085T - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM Power MOSFET IXTH200N085T IXTQ200N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o.

IXTQ200N085T - N-ChannelMOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 85V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5mΩ(Max) ·Fast Switc.

IXTQ200N10T - Power MOSFET (IXYS Corporation)
TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH200N10T IXTQ200N10T Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tst.

IXTQ200N10T - N-ChannelMOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.5mΩ(Max) ·Fast Sw.

IXTQ220N055T - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH220N055T IXTQ220N055T VDSS = ID25 = RDS(on.