IXFH160N15T2 Datasheet - IXYS

IXFH160N15T2 Power MOSFET

Preliminary Technical Information TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH160N15T2 VDSS = ID25 = ≤ RDS(on) trr ≤ 150V 160A 9.0mΩ 160ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C Maximum Lea.

IXFH160N15T2 Features

* z International Standard Package z High Current Handling Capability z Fast Intrinsic Diode z Dynamaic dv/dt Rated z Avalanche Rated z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density Applications z DC-DC Converters z Battery Chargers z Switch-Mode and Resonant-Mode Power S

IXFH160N15T2-IXYS.pdf