IXGT35N120B, IXGH35N120B Datasheet - IXYS

IXGT35N120B IGBT

Advance Technical Information HiPerFASTTM IGBT IXGH 35N120B IXGT 35N120B VCES = IC2 = VCE(sat) = =tfi(typ) 1200 V 70 A 3.3 V 160 ns Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 1200 1200 V GES VGEM Continuous Transient ±20 ±30 IC25 TC = 25°C IC90 TC = 90°C ICM TC = 25°C, 1 ms 70 35 140 SSOA (RBSOA) V= GE 15 V, T VJ = 125°C, R G = 5 W Clamped inductive load I = 90 CM @ 0.8 VCES P C T C = 25°C 300 TJ -55 +150 T.

IXGT35N120B Features

* International standard packages JEDEC TO-268 and JEDEC TO-247 AD

* Low switching losses, low V (sat)

* MOS Gate turn-on - drive simplicity Symbol BVCES VGE(th) I CES IGES VCE(sat) Test Conditions IC = 1 mA, VGE = 0 V IC = 750 mA, VCE = VGE V =V CE CES VGE = 0 V VCE = 0 V,

IXGH35N120B-IXYS.pdf