* International standard packages JEDEC TO-268 and JEDEC TO-247 AD
* Low switching losses, low V (sat)
* MOS Gate turn-on - drive simplicity Symbol BVCES VGE(th) I CES IGES VCE(sat) Test Conditions IC = 1 mA, VGE = 0 V IC = 750 mA, VCE = VGE V =V CE CES VGE = 0 V VCE = 0 V,
IXGT35N120B Datasheet (52.45 KB)
IXGT35N120B
IXYS
52.45 KB
Igbt.
Advance Technical Information HiPerFASTTM IGBT IXGH 35N120B IXGT 35N120B VCES = IC2 = VCE(sat) = =tfi(typ) 1200 V 70 A 3.3 V 160 ns Symbol Test .
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