IXKH35N60C5 Datasheet - IXYS

IXKH35N60C5 Power MOSFET

IXKH 35N60C5 COOLMOS® Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D G S ID25 = 35 A VDSS = 600 V R = DS(on) max 0.1 Ω TO-247 AD G D S q D(TAB) MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse repetitive ID = 11 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0480 V Maximum Ratings 600 V ± 20 V 35 A 25 A 800 mJ 1.2 mJ 50 V/ns Symbol RDSon VGS(th) IDSS IGSS Ciss Coss Qg Qgs Qgd.

IXKH35N60C5 Features

* fast COOLMOS®

* power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness

* Enhanced total power density Applications

* Switched mode power

IXKH35N60C5 Datasheet (105.09 KB)