IXSH40N60B Datasheet - IXYS

IXSH40N60B High Speed IGBT

High Speed IGBT Short Circuit SOA Capability IXSH 40N60B VCES = IXST 40N60B IC25 = VCE(sat) = tfi typ = 600V 75A 2.2V 100 ns Preliminary data Symbol Test Conditions VCES VCGR VGES V GEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ T JM Tstg Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TJ = 125°C, RG = 2.7 W Clamped inductive load, VCC= 0.8 VCES VGE= 15 V, VCE = 360 V, TJ = 125°C R G = 22 W, non r.

IXSH40N60B Features

* International standard packages

* Guaranteed Short Circuit SOA capability

* Low VCE(sat) - for low on-state conduction losses

* High current handling capability

* MOS Gate turn-on - drive simplicity

* Fast Fall Time for switching speeds up to 50 kHz

IXSH40N60B Datasheet (54.21 KB)

IXSH40N60B Datasheet Preview — Preview of IXSH40N60B PDF

Datasheet Details

Part number:

IXSH40N60B

Manufacturer:

IXYS

File Size:

54.21 KB

Description:

High speed igbt.

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IXSH40N60B High Speed IGBT IXYS

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