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IXTK88N30P Datasheet - IXYS

IXTK88N30P PolarHT Power MOSFET

PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P V DSS ID25 RDS(on) = 300 V = 88 A ≤ 40 mΩ TO-247 (IXTH) Symbol VDSS V DGR VGS VGSM ID25 ID(RMS) IDM IAR E AR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C T J = 25° C to 150° C; R GS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C T C = 25° C TC = 25° C I.

IXTK88N30P Features

* l International standard package l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99129E(12/05) Symbol gfs Ciss Coss Crss t d(on) tr td(off) tf Qg(

IXTK88N30P Datasheet (365.07 KB)

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Datasheet Details

Part number:

IXTK88N30P

Manufacturer:

IXYS

File Size:

365.07 KB

Description:

Polarht power mosfet.

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IXTK88N30P PolarHT Power MOSFET IXYS

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