IXTT16P60P Datasheet - IXYS

IXTT16P60P, Power MOSFET

Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH16P60P IXTT16P60P RDS(on) VDSS ID25 = = ≤ .

IXTT16P60P_IXYS.pdf

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Datasheet Details

Part number:

IXTT16P60P

Manufacturer:

IXYS

File Size:

150.83 KB

Description:

Power MOSFET

Features

* z z z z TO-247 (IXTH) G D D (TAB) S D = Drain TAB = Drain G = Gate S = Source 1.6mm (0.062 in. ) from case for 10s Plastic body for 10s Mounting torque TO-268 TO-247 (TO-247) 300 260 1.13 / 10 5 6 International standard packages Avalanche Rated Rugged PolarPTM process Low package inductance

Applications

* z z z z z High side switching Push-pull amplifiers DC Choppers Current regulators Automatic test equipment Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = - 250μA VDS = VGS, ID = - 250μA VGS = ±20V, VDS = 0V VDS = VDSS VGS = 0V VGS = -

IXTT16P60P Distributors

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IXTT16P60P Power MOSFET IXYS

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