IXYN30N170CV1 Datasheet - IXYS

IXYN30N170CV1 High Voltage IGBT

Preliminary Technical Information High Voltage XPTTM IGBT w/ Diode IXYN30N170CV1 VCES = 1700V IC110 = 30A V CE(sat)  4.0V tfi(typ) = 95ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 2.7 Clamped Inductive Load TC = 25°C 50/60Hz IISOL 1mA t = 1min t = 1s Mounting Torque T.

IXYN30N170CV1 Features

* International Standard Package

* miniBLOC, with Aluminium Nitride Isolation

* 2500V~ Isolation Voltage

* Anti-Parallel Diode

* High Voltage Package

* High Blocking Voltage

* Low Saturation Voltage Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES

IXYN30N170CV1-IXYS.pdf