* Optimized for Low Switching Losses
* Square RBSOA
* Isolation Voltage 2500V~
* Anti-Parallel Sonic Diode
* Positive Thermal Coefficient of Vce(sat)
* High Current Handling Capability
* International Standard Package Symbol Test Conditions (TJ = 25C, Unless Otherwise
IXYN80N90C3H1 Datasheet (184.58 KB)
IXYN80N90C3H1
IXYS
184.58 KB
Igbt.
900V XPTTM IGBT GenX3TM w/ Diode
High-Speed IGBT for 20-50 kHz Switching
Preliminary Technical Information
IXYN80N90C3H1
VCES = 900V IC90 = 70A VCE.
📁 Related Datasheet
IXYN82N120C3 High-Speed IGBT (IXYS)
IXYN82N120C3H1 High-Speed IGBT (IXYS)
IXYN100N120B3H1 IGBT (IXYS)
IXYN100N120C3 High-Speed IGBT (IXYS)
IXYN100N120C3H1 High-Speed IGBT (IXYS)
IXYN100N65A3 IGBT (IXYS)
IXYN100N65B3D1 Diode (IXYS)
IXYN100N65C3H1 Diode (IXYS)
IXYN110N120A4 Ultra Low-Vsat PT IGBT (IXYS)
IXYN110N120C4 High Speed IGBT (IXYS)
