IXYN82N120C3 Datasheet - IXYS

IXYN82N120C3 - High-Speed IGBT

1200V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching Preliminary Technical Information IXYN82N120C3 VCES = 1200V IC110 = 66A V CE(sat)  3.20V tfi(typ) = 93ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load TC = 25°C 50/60Hz IISOL 1mA t =.

IXYN82N120C3 Features

* Optimized for Low Switching Losses

* Square RBSOA

* 2500V~ Isolation Voltage

* Positive Thermal Coefficient of Vce(sat)

* High Current Handling Capability

* International Standard Package Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A,

IXYN82N120C3-IXYS.pdf