IXYN82N120C3H1 High-Speed IGBT

IXYS

IXYN82N120C3H1 Description

1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYN82N120C3H1 VCES = 1200V IC110 = 46A V CE(sat)  3.2V tfi(typ) .

IXYN82N120C3H1 Features

* Optimized for Low Switching Losses
* Square RBSOA
* Isolation Voltage 2500V~
* Anti-Parallel Ultra Fast Diode
* Positive Thermal Coefficient of Vce(sat)
* High Current Handling Capability
* International Standard Package Advantages
* High Power Density
* Low Gat

IXYN82N120C3H1 Applications

* High Frequency Power Inverters
* UPS
* Motor Drives
* SMPS
* PFC Circuits
* Battery Chargers
* Welding Machines
* Lamp Ballasts © 2018 IXYS CORPORATION, All Rights Reserved DS100352E(7/18) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC =

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IXYN82N120C3H1 Datasheet Preview — Preview of IXYN82N120C3H1 PDF

Datasheet Details

Part number: IXYN82N120C3H1
Manufacturer: IXYS
File Size: 230.39 KB
Datasheet: IXYN82N120C3H1_IXYS.pdf
Description: High-Speed IGBT

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High-Speed IGBT IXYS

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