IXYN82N120C3H1 Datasheet - IXYS

IXYN82N120C3H1 High-Speed IGBT

1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYN82N120C3H1 VCES = 1200V IC110 = 46A V CE(sat)  3.2V tfi(typ) = 93ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 2 Clamped Inductive Load TC = 25°C 50/60Hz IISOL 1mA t = 1min t .

IXYN82N120C3H1 Features

* Optimized for Low Switching Losses

* Square RBSOA

* Isolation Voltage 2500V~

* Anti-Parallel Ultra Fast Diode

* Positive Thermal Coefficient of Vce(sat)

* High Current Handling Capability

* International Standard Package Advantages

* High Power Density

* Low Gat

IXYN82N120C3H1 Datasheet (230.39 KB)