IXYX50N170C Datasheet - IXYS

IXYX50N170C High Voltage IGBT

High Voltage XPTTM IGBT Advance Technical Information IXYX50N170C VCES = 1700V IC110 = 50A V CE(sat)  3.7V tfi(typ) = 95ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient Maximum Ratings 1700 V 1700 V ±20 V ±30 V TC = 25°C TC = 110°C TC = 25°C, 1ms 178 A 50 A 460 A VGE = 15V, TVJ = 150°C, RG = 1 Clamped Inductive Load ICM = 200 A VCE  .

IXYX50N170C Features

* High Voltage Package

* High Blocking Voltage

* High Peak Current Capability

* Low Saturation Voltage Advantages

* Low Gate Drive Requirement

* High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 25

IXYX50N170C Datasheet (241.47 KB)