* High Voltage Package
* High Blocking Voltage
* High Peak Current Capability
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement
* High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 25
IXYX50N170C Datasheet (241.47 KB)
IXYX50N170C
IXYS
241.47 KB
High voltage igbt.
High Voltage XPTTM IGBT Advance Technical Information IXYX50N170C VCES = 1700V IC110 = 50A V CE(sat) 3.7V tfi(typ) = 95ns Symbol VCES VC.
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