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IXFN100N25 N-Channel MOSFET

IXFN100N25 Description

Advanced Technical Information HiPerFETTM Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS.

IXFN100N25 Features

* International standard package
* miniBLOC, with Aluminium nitride isolation Mounting torque Terminal connection torque 1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. 30 g
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Sw

IXFN100N25 Applications

* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 250 2 V 4 V ±200 nA TJ = 25°C TJ = 125°C 100 mA 2 mA 27 mW
* DC-DC converters
* Battery chargers
* Switched-mode and resonant-mode power supplies VDSS VGS(th) IGSS IDSS RD

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Datasheet Details

Part number
IXFN100N25
Manufacturer
IXYS Corporation
File Size
70.89 KB
Datasheet
IXFN100N25_IXYSCorporation.pdf
Description
N-Channel MOSFET

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