Datasheet Details
- Part number
- IXTH220N055T
- Manufacturer
- IXYS Corporation
- File Size
- 195.48 KB
- Datasheet
- IXTH220N055T-IXYSCorporation.pdf
- Description
- Power MOSFET
IXTH220N055T Description
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH220N055T IXTQ220N055T VDSS = ID25 = RDS(on.
IXTH220N055T Features
* Ultra-low On Resistance
Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 1 mA
IGSS VGS = ± 20 V, VD
IXTH220N055T Applications
* Automotive - Motor Drives - High Side Switch - 12V Battery
- ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99684 (11/06)
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified) gfs VDS=
📁 Related Datasheet
📌 All Tags