IXTH3N120 Power MOSFET

IXYS Corporation

IXTH3N120 Description

High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA3N120 IXTP3N120 IXTH3N120 Symbol VDSS VDGR VGSS VGSM I.

IXTH3N120 Features

* International Standard Packages
* High Voltage Package
* Fast Intrinsic Diode
* Avalanche Rated
* Molding Epoxies meet UL 94 V-0 Flammability Classification
* High Blocking Voltage Advantages
* Easy to Mount
* Space Savings

IXTH3N120 Applications

* High Voltage Power Supplies
* Capacitor Discharge Applications
* Pulse Circuits © 2015 IXYS CORPORATION, All Rights Reserved DS98844F(0515) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 20V, ID = 0.5
* ID25, Note 1 Ciss Coss Crss VGS = 0V, VD

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Datasheet Details

Part number: IXTH3N120
Manufacturer: IXYS Corporation
File Size: 175.61 KB
Datasheet: IXTH3N120_IXYSCorporation.pdf
Description: Power MOSFET

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Power MOSFET IXYS Corporation

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