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2SC3688 Silicon NPN Power Transistors

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Description

isc Silicon NPN Power Transistor 2SC3688 .
High Breakdown Voltage- : V(BR)CBO= 1500V(Min). High Switching Speed. High Reliability. Minimum Lot-to-Lot variations for robust devi.

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Datasheet Specifications

Part number
2SC3688
Manufacturer
Inchange Semiconductor
File Size
198.16 KB
Datasheet
2SC3688_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistors

Applications

* Designed for ultrahigh-definition color display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 6 V IC Collector Current-C

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