2SC3688 - Silicon NPN Power Transistors

Product Overview

Inchange Semiconductor

Datasheet Details

Part number	2SC3688
Manufacturer	Inchange Semiconductor
File Size	198.16 KB
Description	Silicon NPN Power Transistors
Datasheet	2SC3688 Datasheet
Additional preview pages of the 2SC3688 datasheet.

Product details

Description

High Breakdown Voltage- : V(BR)CBO= 1500V(Min) High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition color display horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 6 V IC Collector Current-

📁 Similar Datasheet

2SC3680 - Silicon NPN Transistor (Sanken electric)
2SC3685 - NPN Transistor (Sanyo Semicon Device)
2SC3686 - NPN Transistor (Sanyo Semicon Device)
2SC3687 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
2SC3689 - NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
2SC3600 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SC3601 - PNP / NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SC3603 - NPN EPITAXIAL SILICON TRANSISTOR (NEC)

Other Datasheets by Inchange Semiconductor

2SC3619 - Silicon NPN Power Transistors
2SC3626 - Silicon NPN Power Transistors
2SC3627 - Silicon NPN Power Transistors
2SC3636 - Silicon NPN Power Transistors
2SC3637 - Silicon NPN Power Transistors
2SC3638 - Silicon NPN Power Transistors

Published: Oct 25, 2013 |