Datasheet4U Logo Datasheet4U.com

2N6666 Silicon PNP Darlington Power Transistor

2N6666 Description

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification 2N6666 .
High DC Current Gain- : hFE = 1000(Min)@ IC= -3A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min). Low Collector-Emitter Sa.

2N6666 Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A

📥 Download Datasheet

Preview of 2N6666 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2N6666
Manufacturer
Inchange Semiconductor
File Size
82.43 KB
Datasheet
2N6666-InchangeSemiconductor.pdf
Description
Silicon PNP Darlington Power Transistor

📁 Related Datasheet

  • 2N6660 - N-Channel Enhancement-Mode Vertical DMOS FETs (Supertex Inc)
  • 2N6660-2 - N-Channel MOSFET (Vishay Siliconix)
  • 2N6660JAN - N-Channel MOSFET (Vishay)
  • 2N6660JANTX - N-Channel MOSFET (Vishay Siliconix)
  • 2N6660JANTXV - N-Channel MOSFET (Vishay Siliconix)
  • 2N6660X - N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR (Seme LAB)
  • 2N6661 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Seme LAB)
  • 2N6661-2 - N-Channel MOSFET (Vishay)

📌 All Tags

Silicon PNP Darlington Power Transistor Inchange Semiconductor
Inchange Semiconductor 2N6666-like datasheet