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2SD1351 - Silicon NPN Power Transistors

2SD1351 Description

isc Silicon NPN Power Transistor 2SD1351 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Collector Power Dissipation- : PC= 30W@ TC= 25℃. Low Collector Saturation Volt.

2SD1351 Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current-Continuous Colle

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Datasheet Details

Part number
2SD1351
Manufacturer
Inchange Semiconductor
File Size
208.21 KB
Datasheet
2SD1351-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistors

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Silicon NPN Power Transistors Inchange Semiconductor
Inchange Semiconductor 2SD1351-like datasheet