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2SD1663 - Power Transistor

2SD1663 Description

isc Silicon NPN Power Transistor .
High Collector-Base Breakdown Voltage- : V(BR)CBO= 1300V (Min. High Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lo.

2SD1663 Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCES Collector- Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.7 V IC Collector Current-Cont

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Power Transistor Inchange Semiconductor
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