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2SD2128 Power Transistor

2SD2128 Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High DC.

2SD2128 Applications

* Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Curren

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