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2SD458 Silicon NPN Power Transistors

2SD458 Description

isc Silicon NPN Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High Power Dissipation- : PC= 80W(Max)@TC=25℃. Minimum Lot-to-Lot variations.

2SD458 Applications

* Designed for high power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCER Collector-Emitter Voltage RBE= 50Ω 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC

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Datasheet Details

Part number
2SD458
Manufacturer
Inchange Semiconductor
File Size
207.43 KB
Datasheet
2SD458_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistors

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Silicon NPN Power Transistors Inchange Semiconductor
Inchange Semiconductor 2SD458-like datasheet