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2SD861 - Silicon NPN Transistor

2SD861 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min). High Power Dissipation- : PC= 45W@ TC= 25℃. Minimum Lot-to-Lot variations for.

2SD861 Applications

* Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector

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Datasheet Details

Part number
2SD861
Manufacturer
Inchange Semiconductor
File Size
212.47 KB
Datasheet
2SD861-InchangeSemiconductor.pdf
Description
Silicon NPN Transistor

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Silicon NPN Transistor Inchange Semiconductor
Inchange Semiconductor 2SD861-like datasheet

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