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KTD1414 - Silicon NPN Power Transistors

KTD1414 Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High DC C.

KTD1414 Applications

* Switching applications
* Hammer driver,pulse motor driver applications
* Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Col

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Datasheet Details

Part number
KTD1414
Manufacturer
Inchange Semiconductor
File Size
212.80 KB
Datasheet
KTD1414-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistors

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Silicon NPN Power Transistors Inchange Semiconductor
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