Datasheet4U Logo Datasheet4U.com

MJD3055 - Silicon NPN Power Transistor

MJD3055 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor MJD3055 .
Excellent Safe Operating Area. Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Complement to Type MJD2955. DPA.

MJD3055 Applications

* Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
* Designed for use in general purpose amplifer and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Coll

📥 Download Datasheet

Preview of MJD3055 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
MJD3055
Manufacturer
Inchange Semiconductor
File Size
251.77 KB
Datasheet
MJD3055-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

📁 Related Datasheet

  • MJD3055T4 - Low voltage NPN power transistor (STMicroelectronics)
  • MJD31 - Complementary Power Transistors (Kexin)
  • MJD31B - Complementary Silicon Power Transistors (ST Microelectronics)
  • MJD31C - NPN Transistor (SeCoS)
  • MJD31CA - 3A NPN high power bipolar transistor (nexperia)
  • MJD31CH-Q - 3A NPN high power bipolar transistor (nexperia)
  • MJD31CQ - 100V NPN HIGH VOLTAGE TRANSISTOR (Diodes)
  • MJD31CT4-A - Low voltage NPN power transistor (STMicroelectronics)

📌 All Tags

Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor MJD3055-like datasheet