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MJD31C - Silicon NPN Power Transistor

MJD31C Description

isc Silicon NPN Power Transistors .
DC Current Gain -hFE = 25(Min)@ IC= 1A. Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min). Complement to Type MJD32C. DPAK.

MJD31C Applications

* Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
* Designed for use in general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC Tj Collector-Ba

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Datasheet Details

Part number
MJD31C
Manufacturer
Inchange Semiconductor
File Size
250.13 KB
Datasheet
MJD31C-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor MJD31C-like datasheet

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