ITCH16045A2 Datasheet - Innogration

ITCH16045A2, High Power RF LDMOS FET

Innogration (Suzhou) Co., Ltd.Document Number: ITCH16045A Preliminary Datasheet V2.0 1300-1700MHz, 45W, 28V High Power RF LDMOS FETs .
The ITCH16045A is a 45-watt, input-matched LDMOS FETs, designed for Beidou Global Positioning System and communication/ISM applications with frequenci.

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Datasheet Details

Part number:

ITCH16045A2

Manufacturer:

Innogration

File Size:

393.12 KB

Description:

High Power RF LDMOS FET

Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift
* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
* Pb-free, RoHS-compliant Table

Applications

* with frequencies from 1300 MHz to 1700 MHz. It can be used in Class AB/B and Class C for all typical modulation formats. ITCH16045A2
* Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 50 mA, CW. Frequency Gp (dB) P-1dB (W ) D@P-1 (%) 1615 MHz 20

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ITCH16045A2 High Power LDMOS FET Innogration

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