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ITCH16180B4 - High Power RF LDMOS FET

ITCH16180B4 Description

Innogration (Suzhou) Co., Ltd.Document Number: ITCH16180B4 Product Datasheet V2.0 1300MHz-1600MHz, 180W, 28V High Power RF LDMOS FETs .
The ITCH16180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with freque.

ITCH16180B4 Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use

ITCH16180B4 Applications

* with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external match network. ITCH16180B4
* Typical Class AB Performance of Single Section (On Test Fixture with device soldered): VDD = 28 Volts, IDQ

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Datasheet Details

Part number
ITCH16180B4
Manufacturer
Innogration
File Size
1.12 MB
Datasheet
ITCH16180B4-Innogration.pdf
Description
High Power RF LDMOS FET

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Innogration ITCH16180B4-like datasheet