ITCH16180B4 Datasheet (Innogration) - High Power RF LDMOS FET

ITCH16180B4, High Power RF LDMOS FET

The ITCH16180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz.

Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external ma

ITCH16180B4 Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Internally Matched for Ease of Use

* Optimized for Doherty Applications

* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation

* Excellent thermal stability, low HCI dri