Datasheet4U Logo Datasheet4U.com

ITCH16180B4

High Power RF LDMOS FET

ITCH16180B4 Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Internally Matched for Ease of Use

* Optimized for Doherty Applications

* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation

* Excellent thermal stability, low HCI dri

ITCH16180B4 General Description

The ITCH16180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external ma.

ITCH16180B4 Datasheet (1.12 MB)

Preview of ITCH16180B4 PDF

Datasheet Details

Part number:

ITCH16180B4

Manufacturer:

Innogration

File Size:

1.12 MB

Description:

High power rf ldmos fet.

📁 Related Datasheet

ITCH16180B2 High Power RF LDMOS FET (Innogration)

ITCH16180B2E High Power RF LDMOS FET (Innogration)

ITCH16180B4E High Power RF LDMOS FET (Innogration)

ITCH16045A2 High Power RF LDMOS FET (Innogration)

ITCH16045A2E High Power RF LDMOS FET (Innogration)

ITCH16230B2 High Power RF LDMOS FET (Innogration)

ITCH16230B2E High Power RF LDMOS FET (Innogration)

ITCH15401D4 High Power RF LDMOS FET (Innogration)

ITCH18180B4 High Power RF LDMOS FET (Innogration)

ITCH18180B4E High Power RF LDMOS FET (Innogration)

TAGS

ITCH16180B4 High Power LDMOS FET Innogration

Image Gallery

ITCH16180B4 Datasheet Preview Page 2 ITCH16180B4 Datasheet Preview Page 3

ITCH16180B4 Distributor