ITCH16180B4 Datasheet - Innogration

ITCH16180B4, High Power RF LDMOS FET

Innogration (Suzhou) Co., Ltd.Document Number: ITCH16180B4 Product Datasheet V2.0 1300MHz-1600MHz, 180W, 28V High Power RF LDMOS FETs .
The ITCH16180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with freque.

datasheet Preview Page 1 from Datasheet4u.com

ITCH16180B4-Innogration.pdf

ITCH16180B4 Datasheet Preview — Preview of ITCH16180B4 PDF

Datasheet Details

Part number:

ITCH16180B4

Manufacturer:

Innogration

File Size:

1.12 MB

Description:

High Power RF LDMOS FET

Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use

Applications

* with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external match network. ITCH16180B4
* Typical Class AB Performance of Single Section (On Test Fixture with device soldered): VDD = 28 Volts, IDQ

ITCH16180B4 Distributors

📁 Related Datasheet

ITC008 ITC1000 ITC1100 ITC117 ITC117P ITC117PL

📌 All Tags

ITCH16180B4 High Power LDMOS FET Innogration

Innogration ITCH16180B4-like datasheet