ITCH16180B4 High Power RF LDMOS FET

Innogration

Description

Innogration (Suzhou) Co., Ltd.Document Number: ITCH16180B4 Product Datasheet V2.0 1300MHz-1600MHz, 180W, 28V High Power RF LDMOS FETs .
The ITCH16180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with freque.

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Datasheet Specifications

Part number: ITCH16180B4
Manufacturer: Innogration
File Size: 1.12 MB
Datasheet: ITCH16180B4-Innogration.pdf
Description: High Power RF LDMOS FET

Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use

Applications

* with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external match network. ITCH16180B4
* Typical Class AB Performance of Single Section (On Test Fixture with device soldered): VDD = 28 Volts, IDQ

ITCH16180B4 Distributors

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High Power LDMOS FET Innogration

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