ITCH16230B2 Datasheet - Innogration

ITCH16230B2, High Power RF LDMOS FET

Innogration (Suzhou) Co., Ltd.Document Number: ITCH16230B2 Preliminary Datasheet V1.1 1300MHz-1700MHz, 230W, 28V High Power RF LDMOS FETs Descript.
The ITCH16230B2 is a 230-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with freque.

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Datasheet Details

Part number:

ITCH16230B2

Manufacturer:

Innogration

File Size:

785.36 KB

Description:

High Power RF LDMOS FET

Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain
* Source Voltage Gate
* Source Voltage Operating Voltage Storage Temperature Ra

Applications

* with frequencies from 1300 to 1700 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH16230B2
* Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 100 mA,CW. Frequency Gp (dB) POUT (W ) D@ (%) 1

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ITCH16230B2 High Power LDMOS FET Innogration

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