ITCH16230B2 High Power RF LDMOS FET

Innogration

Description

Innogration (Suzhou) Co., Ltd.Document Number: ITCH16230B2 Preliminary Datasheet V1.1 1300MHz-1700MHz, 230W, 28V High Power RF LDMOS FETs Descript.
The ITCH16230B2 is a 230-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with freque.

📥 Download Datasheet

ITCH16230B2 Datasheet Preview — Preview of ITCH16230B2 PDF

Datasheet Specifications

Part number: ITCH16230B2
Manufacturer: Innogration
File Size: 785.36 KB
Datasheet: ITCH16230B2-Innogration.pdf
Description: High Power RF LDMOS FET

Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain
* Source Voltage Gate
* Source Voltage Operating Voltage Storage Temperature Ra

Applications

* with frequencies from 1300 to 1700 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH16230B2
* Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 100 mA,CW. Frequency Gp (dB) POUT (W ) D@ (%) 1

ITCH16230B2 Distributors

📁 Related Datasheet

ITC008 ITC1000 ITC1100 ITC117 ITC117P ITC117PL

📌 All Tags

ITCH16230B2 High Power LDMOS FET Innogration

Innogration ITCH16230B2-like datasheet