* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain
* Source Voltage Gate
* Source Voltage Operating Voltage Storage Temperature Ra
ITCH16230B2E Datasheet (785.36 KB)
ITCH16230B2E
Innogration
785.36 KB
High power rf ldmos fet.
Innogration (Suzhou) Co., Ltd.
Document Number: ITCH16230B2 Preliminary Datasheet V1.1
1300MHz-1700MHz, 230W, 28V High Power RF LDMOS FETs
Descript.
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