Datasheet Details
Part number:
ITCH16180B2E, ITCH16180B2
Manufacturer:
Innogration
File Size:
1.01 MB
Description:
High power rf ldmos fet.
Note:
This datasheet PDF includes multiple part numbers: ITCH16180B2E, ITCH16180B2.
Please refer to the document for exact specifications by model.
ITCH16180B2E, ITCH16180B2, High Power RF LDMOS FET
The ITCH16180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1700 MHz.
It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITCH16180B2 *Typ
ITCH16180B2E Features
* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain
* Source Voltage Gate
* Source Voltage Operating Voltage Storage Temperature Ra
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