* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain
* Source Voltage Gate
* Source Voltage Operating Voltage Storage Temperature Ra
ITCH16180B2E Datasheet (1.01 MB)
ITCH16180B2E
Innogration
1.01 MB
High power rf ldmos fet.
Innogration (Suzhou) Co., Ltd.
Document Number: ITCH16180B2 Preliminary Datasheet V2.0
1300MHz-1700MHz, 180W, 28V High Power RF LDMOS FETs
Descript.
📁 Related Datasheet
ITCH16180B2 High Power RF LDMOS FET (Innogration)
ITCH16180B4 High Power RF LDMOS FET (Innogration)
ITCH16180B4E High Power RF LDMOS FET (Innogration)
ITCH16045A2 High Power RF LDMOS FET (Innogration)
ITCH16045A2E High Power RF LDMOS FET (Innogration)
ITCH16230B2 High Power RF LDMOS FET (Innogration)
ITCH16230B2E High Power RF LDMOS FET (Innogration)
ITCH15401D4 High Power RF LDMOS FET (Innogration)
ITCH18180B4 High Power RF LDMOS FET (Innogration)
ITCH18180B4E High Power RF LDMOS FET (Innogration)
