Description
Innogration (Suzhou) Co., Ltd.Document Number: ITCH16180B2 Preliminary Datasheet V2.0 1300MHz-1700MHz, 180W, 28V High Power RF LDMOS FETs Descript.
The ITCH16180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with freque.
Features
* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift
Table 1. Maximum Ratings Rating
Drain
* Source Voltage Gate
* Source Voltage Operating Voltage Storage Temperature Ra
Applications
* with frequencies from 1300 to 1700 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH16180B2
* Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 800 mA, Pulse CW, Pulse Width=12 us, Duty cycle=10% .
