ITCH16180B4E, ITCH16180B4 Datasheet - Innogration

ITCH16180B4E High Power RF LDMOS FET

The ITCH16180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external ma.

ITCH16180B4E Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Internally Matched for Ease of Use

* Optimized for Doherty Applications

* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation

* Excellent thermal stability, low HCI dri

ITCH16180B4-Innogration.pdf

ITCH16180B4E Datasheet Preview — This datasheet PDF includes multiple part numbers: ITCH16180B4E, ITCH16180B4. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ITCH16180B4E, ITCH16180B4

Manufacturer:

Innogration

File Size:

1.12 MB

Description:

High power rf ldmos fet.

Note:

This datasheet PDF includes multiple part numbers: ITCH16180B4E, ITCH16180B4.
Please refer to the document for exact specifications by model.

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ITCH16180B4E ITCH16180B4 High Power LDMOS FET Innogration

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