Description
Innogration (Suzhou) Co., Ltd.Document Number: ITCH16180B4 Product Datasheet V2.0 1300MHz-1600MHz, 180W, 28V High Power RF LDMOS FETs .
The ITCH16180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with freque.
Features
* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
Applications
* with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external match network. ITCH16180B4
* Typical Class AB Performance of Single Section (On Test Fixture with device soldered): VDD = 28 Volts, IDQ
