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ITCH16180B4E, ITCH16180B4 Datasheet - Innogration

ITCH16180B4E, ITCH16180B4, High Power RF LDMOS FET

Innogration (Suzhou) Co., Ltd.Document Number: ITCH16180B4 Product Datasheet V2.0 1300MHz-1600MHz, 180W, 28V High Power RF LDMOS FETs .
The ITCH16180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with freque.
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ITCH16180B4-Innogration.pdf

This datasheet PDF includes multiple part numbers: ITCH16180B4E, ITCH16180B4. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ITCH16180B4E, ITCH16180B4

Manufacturer:

Innogration

File Size:

1.12 MB

Description:

High Power RF LDMOS FET

Note:

This datasheet PDF includes multiple part numbers: ITCH16180B4E, ITCH16180B4.
Please refer to the document for exact specifications by model.

Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use

Applications

* with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external match network. ITCH16180B4
* Typical Class AB Performance of Single Section (On Test Fixture with device soldered): VDD = 28 Volts, IDQ

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