Datasheet Details
Part number:
ITCH16180B4E, ITCH16180B4
Manufacturer:
Innogration
File Size:
1.12 MB
Description:
High power rf ldmos fet.
Note:
This datasheet PDF includes multiple part numbers: ITCH16180B4E, ITCH16180B4.
Please refer to the document for exact specifications by model.
ITCH16180B4E, ITCH16180B4, High Power RF LDMOS FET
The ITCH16180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz.
Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external ma
ITCH16180B4E Features
* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Optimized for Doherty Applications
* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
* Excellent thermal stability, low HCI dri
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