ITCH16180B4E

High Power RF LDMOS FET

Innogration

ITCH16180B4E Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Internally Matched for Ease of Use

* Optimized for Doherty Applications

* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation

* Excellent thermal stability, low HCI dri

ITCH16180B4E General Description

The ITCH16180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external ma.

ITCH16180B4E Datasheet (1.12 MB)

ITCH16180B4E Datasheet Preview — Preview of ITCH16180B4E PDF

Datasheet Details

Part number:

ITCH16180B4E

Manufacturer:

Innogration

File Size:

1.12 MB

Description:

High power rf ldmos fet.

📁 Related Datasheet

ITCH16180B4 High Power RF LDMOS FET (Innogration)

ITCH16180B2 High Power RF LDMOS FET (Innogration)

ITCH16180B2E High Power RF LDMOS FET (Innogration)

ITCH16045A2 High Power RF LDMOS FET (Innogration)

ITCH16045A2E High Power RF LDMOS FET (Innogration)

ITCH16230B2 High Power RF LDMOS FET (Innogration)

ITCH16230B2E High Power RF LDMOS FET (Innogration)

ITCH15401D4 High Power RF LDMOS FET (Innogration)

ITCH18180B4 High Power RF LDMOS FET (Innogration)

ITCH18180B4E High Power RF LDMOS FET (Innogration)

TAGS

ITCH16180B4E High Power LDMOS FET Innogration

Image Gallery

ITCH16180B4E Features

ITCH16180B4E General Description

Datasheet Details

File Size:

Description:

ITCH16180B4E Distributor