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ITCH36015E2 RF Power LDMOS FET

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Description

Innogration (Suzhou) Co., Ltd.Document Number: ITCH36015E2 Preliminary Datasheet V1.1 700MHz-3600MHz, 20W, 28V RF Power LDMOS FETs .
The ITCH36015E2 is a 20-watt, internally matched LDMOS FET, designed for cellular base station and ISM applications with frequencies from 700MHz to 36.

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Datasheet Specifications

Part number
ITCH36015E2
Manufacturer
Innogration
File Size
931.12 KB
Datasheet
ITCH36015E2-Innogration.pdf
Description
RF Power LDMOS FET

Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift
* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
* Pb-free, RoHS-compliant Table

Applications

* with frequencies from 700MHz to 3600 MHz ITCH36015E2
* Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 120 mA,Pulse Width =20us, Duty Cycle =10%. Frequency GMAX P_1dB P_3dB ηD (MHz) (dB) (dBm) (dBm) (%) Pavg=33dBm WCDMA Signal(1) Gp ηD ACP

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