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ITCH09080GX High Power RF LDMOS FET

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Description

Innogration (Suzhou) Co., Ltd.80W, 28V High Power RF LDMOS FETs .
The ITCH09080GX is a 80-watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio applications with frequencies from HF to 1500MHz.

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Datasheet Specifications

Part number
ITCH09080GX
Manufacturer
Innogration
File Size
547.48 KB
Datasheet
ITCH09080GX-Innogration.pdf
Description
High Power RF LDMOS FET

Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift
* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
* Pb-free, RoHS-compliant Table

Applications

* with frequencies from HF to 1500MHz. It can be used in Class AB/B and Class C for all typical modulation formats. Document Number: ITCH09080GX Product Datasheet V1.0 ITCH09080GX
* Typical Class AB Performance (On Innogration fixture with device soldered): VDD = 28 Volts,Vgs=3.02V, IDQ = 450 mA

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