ITCH15401D4 High Power RF LDMOS FET

Innogration

Description

Innogration (Suzhou) Co., Ltd.Document Number: ITCH15401D4 Preliminary Datasheet V2.0 1300-1500MHz, 400W, High Power RF LDMOS FETs .
ITCH15401D4 is a 400-watt, internally matched LDMOS FETs, designed for multiple applications with frequencies from 1300-1500MHz . Typical Pe.

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Datasheet Specifications

Part number: ITCH15401D4
Manufacturer: Innogration
File Size: 564.09 KB
Datasheet: ITCH15401D4-Innogration.pdf
Description: High Power RF LDMOS FET

Features

* Low cost, high reliable solution.
* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
* Excellent thermal stability, low HCI drif

Applications

* with frequencies from 1300-1500MHz .
* Typical Performance (on Innogration 1.3GHz narrow band fixture with device soldered): Vdd=28V, Vgs=2.57V, Idq=400mA,Tc=25 degree C, Test signal: CW, Freq(MHz) Pin(dBm) Pout(dBm) Pout(W) Id(A) Gp(dB) Eff 1300 37.7 56.3 430 24.5 18.6 63% ITCH15401

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ITCH15401D4 High Power LDMOS FET Innogration

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