ITCH42008E2 Datasheet (Innogration)

ITCH42008E2, RF Power LDMOS FET

The ITCH42008E2 is a 8-watt, internally matched LDMOS FET, designed for cellular base station and ISM applications with frequencies from 500MHz to 4200 MHz *Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 100 mA，Pulse Width =10us, Duty Cycle =12%.

3600-

ITCH42008E2 Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Internally Matched for Ease of Use

* Excellent thermal stability, low HCI drift

* Large Positive and Negative Gate/Source