Datasheet Details
- Part number
- ITCH42008E2
- Manufacturer
- Innogration
- File Size
- 510.84 KB
- Datasheet
- ITCH42008E2-Innogration.pdf
- Description
- RF Power LDMOS FET
ITCH42008E2 Description
Innogration (Suzhou) Co., Ltd.500-4200MHz, 8W, 28V RF Power LDMOS FETs .
The ITCH42008E2 is a 8-watt, internally matched LDMOS FET, designed for cellular base station and ISM applications with frequencies from 500MHz to 420.
ITCH42008E2 Features
* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift
* Large Positive and Negative Gate/Source
ITCH42008E2 Applications
* with frequencies from 500MHz to 4200 MHz
* Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 100 mA，Pulse Width =10us, Duty Cycle =12%. 3600-3800M demo：
Frequency (MHz)
Gain (dB)
P_3dB (dBm)
ηD (%)
3600
13.9
41.7
47.6
3700
15.3
41.2
46.8
3800
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