ITCH42008E2 RF Power LDMOS FET

Innogration

Description

Innogration (Suzhou) Co., Ltd.500-4200MHz, 8W, 28V RF Power LDMOS FETs .
The ITCH42008E2 is a 8-watt, internally matched LDMOS FET, designed for cellular base station and ISM applications with frequencies from 500MHz to 420.

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Datasheet Specifications

Part number: ITCH42008E2
Manufacturer: Innogration
File Size: 510.84 KB
Datasheet: ITCH42008E2-Innogration.pdf
Description: RF Power LDMOS FET

Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift
* Large Positive and Negative Gate/Source

Applications

* with frequencies from 500MHz to 4200 MHz
* Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 100 mA，Pulse Width =10us, Duty Cycle =12%. 3600-3800M demo： Frequency (MHz) Gain (dB) P_3dB (dBm) ηD (%) 3600 13.9 41.7 47.6 3700 15.3 41.2 46.8 3800

ITCH42008E2 Distributors

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ITCH42008E2 Power LDMOS FET Innogration

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