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ITCH42008E2 Datasheet - Innogration

RF Power LDMOS FET

ITCH42008E2 Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Internally Matched for Ease of Use

* Excellent thermal stability, low HCI drift

* Large Positive and Negative Gate/Source

ITCH42008E2 General Description

The ITCH42008E2 is a 8-watt, internally matched LDMOS FET, designed for cellular base station and ISM applications with frequencies from 500MHz to 4200 MHz *Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 100 mA,Pulse Width =10us, Duty Cycle =12%. 3600-.

ITCH42008E2 Datasheet (510.84 KB)

Preview of ITCH42008E2 PDF

Datasheet Details

Part number:

ITCH42008E2

Manufacturer:

Innogration

File Size:

510.84 KB

Description:

Rf power ldmos fet.

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ITCH42008E2 Power LDMOS FET Innogration

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