IRF6614 Datasheet (International Rectifier)

IRF6614, DirectFET Power MOSFET

The IRF6614 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries used

PD -96907A www.DataSheet4U.com IRF6614 DirectFET Power MOSFET l l l l l l l l l l Application Specific MOSFETs VDSS VGS RDS(on) RDS(on) Lead and Bromide Free 40V max ±20V max 5.9mΩ@ 10V 7.1mΩ@ 4.5V Low Profile (<0.7 mm) Dual Sided Cooling Compatible Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ultra Low Package Inductance 19nC 6.0nC 1.4nC 5.5nC 9.5nC 1.8V Optimized for High Frequency Switching above 1MHz Ideal for CPU Core and Telecom Synchronous Rectification in DC-DC Converters Optimized for C

IRF6614 Features

* .00 10.00 100.00 10.0 TJ = 150°C TJ = 25°C TJ = -40°C 1.0 1msec 10msec VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 2.2 VSD , Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 2.5 Fig11. Maximum Safe Operating Area 50 VGS(th) Gate threshol