IRF6614

DirectFET Power MOSFET

International Rectifier

IRF6614 Features

* .00 10.00 100.00 10.0 TJ = 150°C TJ = 25°C TJ = -40°C 1.0 1msec 10msec VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 2.2 VSD , Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 2.5 Fig11. Maximum Safe Operating Area 50 VGS(th) Gate threshol

IRF6614 General Description

The IRF6614 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used.

IRF6614 Datasheet (281.81 KB)

IRF6614 Datasheet Preview — Preview of IRF6614 PDF

Datasheet Details

Part number:

IRF6614

Manufacturer:

International Rectifier

File Size:

281.81 KB

Description:

Directfet power mosfet.
PD -96907A www.DataSheet4U.com IRF6614 DirectFET Power MOSFET l l l l l l l l l l Application Specific MOSFETs VDSS VGS RDS(on) RDS(on) Lead and.

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IRF6614 DirectFET Power MOSFET International Rectifier

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IRF6614 Features

IRF6614 General Description

Datasheet Details

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