IRF6614PBF Datasheet (International Rectifier)

IRF6614PBF, Power MOSFET

The IRF6614PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries u

PD -97090 Typical values (unless otherwise specified) DirectFET Power MOSFET RDS(on) Qgs2 1.4nC IRF6614PbF IRF6614TRPbF RDS(on) Qoss 9.5nC RoHS Compliant Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l l VDSS Qg tot VGS Qgd 6.0nC 40V max ±20V max 5.9mΩ@ 10V 7.1mΩ@ 4.5

IRF6614PBF Features

* ent (A) 10.0 TJ = 150°C TJ = 25°C TJ = -40°C 1.0 1msec 10msec VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 2.2 VSD , Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 2.5 Fig11. Maximum Safe Operating Area 50 VGS(th) Gate threshold Voltage