IRF6614PBF Datasheet - International Rectifier

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IRF6614PBF Power MOSFET

PD -97090 Typical values (unless otherwise specified) DirectFET Power MOSFET RDS(on) Qgs2 1.4nC IRF6614PbF IRF6614TRPbF RDS(on) Qoss 9.5nC RoHS.
The IRF6614PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resi.

IRF6614PBF-InternationalRectifier.pdf

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Datasheet Details

Part number:

IRF6614PBF

Manufacturer:

International Rectifier

File Size:

292.80 KB

Description:

Power MOSFET

Features

* ent (A) 10.0 TJ = 150°C TJ = 25°C TJ = -40°C 1.0 1msec 10msec VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 2.2 VSD , Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 2.5 Fig11. Maximum Safe Operating Area 50 VGS(th) Gate threshold Voltage

Applications

* PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best th

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IRF6614PBF Power MOSFET International Rectifier

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