Datasheet Specifications
- Part number
- IRF6616PBF
- Manufacturer
- International Rectifier
- File Size
- 300.85 KB
- Datasheet
- IRF6616PBF-InternationalRectifier.pdf
- Description
- Power MOSFET
Description
IRF6616PbF IRF6616TRPbF RoHS compliant containing no lead or bormide l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package I.
Features
* e Pulse 0 1 10 100 1000 1.00 1 0.10 VGS = 0V 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V) 0.1 VDS , Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 120 100 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) 2.5 FApplications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best tIRF6616PBF Distributors
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