IRF6710S2TR1PbF Datasheet, Mosfet, International Rectifier

IRF6710S2TR1PbF Features

• Mosfet V) Fig 6. Typical Transfer Characteristics 10000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance(pF) 1000 Ciss Coss Crss 100 1 10 1

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IRF6710S2TR1PbF

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International Rectifier

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📄 Datasheet

Description:

Power mosfet. The IRF6710S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve imp

IRF6710S2TR1PbF Application

• Applications PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regard

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IRF6710S2TR1PbF

International Rectifier

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