Description
PD - 97124D IRF6710S2TRPbF IRF6710S2TR1PbF l RoHS Compliant Containing No Lead and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compati.
The IRF6710S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance.
Features
* d Voltage (V)
30 2.5
ID, Drain Current (A)
20 2.0 ID = 1.0A ID = 1.0mA ID = 250µA
10 1.5 ID = 25µA
EAS, Single Pulse Avalanche Energy (mJ)
0 25 50 75 100 125 150 175 TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
700 TJ = 175°C
600
500
400 TJ = 25°C 300
1.0 -75 -
Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t