IRF6710S2TR1PbF Datasheet - International Rectifier

IRF6710S2TR1PbF Power MOSFET

The IRF6710S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in.

PD - 97124D IRF6710S2TRPbF IRF6710S2TR1PbF l RoHS Compliant Containing No Lead and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible DirectFET Power MOSFET Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters 25V max ±20V max 4.5mΩ@ 10V 9.0mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for Control FET Application l Compat.

IRF6710S2TR1PbF Features

* d Voltage (V) 30 2.5 ID, Drain Current (A) 20 2.0 ID = 1.0A ID = 1.0mA ID = 250µA 10 1.5 ID = 25µA EAS, Single Pulse Avalanche Energy (mJ) 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 700 TJ = 175°C 600 500 400 TJ = 25°C 300 1.0 -75 -

IRF6710S2TR1PbF Datasheet (294.83 KB)