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IRF6710S2TR1PbF, IRF6710S2TRPbF Datasheet - International Rectifier

IRF6710S2TR1PbF Power MOSFET

The IRF6710S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in.
PD - 97124D IRF6710S2TRPbF IRF6710S2TR1PbF l RoHS Compliant Containing No Lead and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible   DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters 25V max ±20V max 4.5mΩ@ 10V 9.0mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for Control FET Application l Compat.

IRF6710S2TR1PbF Features

* d Voltage (V) 30 2.5 ID, Drain Current (A) 20 2.0 ID = 1.0A ID = 1.0mA ID = 250µA 10 1.5 ID = 25µA EAS, Single Pulse Avalanche Energy (mJ) 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 700 TJ = 175°C 600 500 400 TJ = 25°C 300 1.0 -75 -

IRF6710S2TRPbF-InternationalRectifier.pdf

This datasheet PDF includes multiple part numbers: IRF6710S2TR1PbF, IRF6710S2TRPbF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

IRF6710S2TR1PbF, IRF6710S2TRPbF

Manufacturer:

International Rectifier

File Size:

294.83 KB

Description:

Power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IRF6710S2TR1PbF, IRF6710S2TRPbF.
Please refer to the document for exact specifications by model.

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IRF6710S2TR1PbF IRF6710S2TRPbF Power MOSFET International Rectifier

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