IRF6710S2TR1PbF - Power MOSFET
The IRF6710S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in.
PD - 97124D IRF6710S2TRPbF IRF6710S2TR1PbF l RoHS Compliant Containing No Lead and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible DirectFET Power MOSFET Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters 25V max ±20V max 4.5mΩ@ 10V 9.0mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for Control FET Application l Compat.
IRF6710S2TR1PbF Features
* d Voltage (V)
30 2.5
ID, Drain Current (A)
20 2.0 ID = 1.0A ID = 1.0mA ID = 250µA
10 1.5 ID = 25µA
EAS, Single Pulse Avalanche Energy (mJ)
0 25 50 75 100 125 150 175 TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
700 TJ = 175°C
600
500
400 TJ = 25°C 300
1.0 -75 -