IRF6711SPBF Datasheet (International Rectifier)

IRF6711SPBF, Power MOSFET

The IRF6711STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries used in

PD - 96280 IRF6711SPbF IRF6711STRPbF l l l l l l l l l RoHS Compliant and Halogen Free Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for Control FET Application Compatible with existing Surface Mount Techniques 100% Rg tested Typical values (unless otherwise specified) DirectFET Power MOSFET RDS(on) Qgs2 1.8nC VDSS Qg tot VGS Qgd 4.4nC RDS(on) Qoss 9.5nC 25V

IRF6711SPBF Features

* ward Voltage 90 80 70 ID, Drain Current (A) Fig11. Maximum Safe Operating Area Typical VGS(th) Gate threshold Voltage (V) 3.0 2.5 60 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 25µA ID = 250µA ID = 1.0mA ID = 1.0A 1.5 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 T