IRF6712SPBF Datasheet - International Rectifier

IRF6712SPBF N-Channel HEXFET Power MOSFET

The IRF6712SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries .

IRF6712SPbF IRF6712STRPbF l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters DirectFET Power MOSFET Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 25V max ±20V max 3.8m@ 10V 6.7m@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 12nC 4.0nC 1.7nC 14nC 10nC 1.9V l Optimized for both Sync.FET and some Control FET appl.

IRF6712SPBF Datasheet (247.48 KB)