IRF6711STRPBF, IRF6711SPBF Datasheet - International Rectifier

IRF6711STRPBF, IRF6711SPBF, Power MOSFET

PD - 96280 IRF6711SPbF IRF6711STRPbF l l l l l l l l l RoHS Compliant and Halogen Free Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra.
The IRF6711STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance.

Features

* ward Voltage 90 80 70 ID, Drain Current (A) Fig11. Maximum Safe Operating Area Typical VGS(th) Gate threshold Voltage (V) 3.0 2.5 60 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 25µA ID = 250µA ID = 1.0mA ID = 1.0A 1.5 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 T

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

IRF6711SPBF-InternationalRectifier.pdf