IRF6711STRPBF

Power MOSFET

International Rectifier

IRF6711STRPBF Features

* ward Voltage 90 80 70 ID, Drain Current (A) Fig11. Maximum Safe Operating Area Typical VGS(th) Gate threshold Voltage (V) 3.0 2.5 60 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 25µA ID = 250µA ID = 1.0mA ID = 1.0A 1.5 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 T

IRF6711STRPBF General Description

The IRF6711STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in .

IRF6711STRPBF Datasheet (325.56 KB)

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Datasheet Details

Part number:

IRF6711STRPBF

Manufacturer:

International Rectifier

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325.56 KB

Description:

Power mosfet.
PD - 96280 IRF6711SPbF IRF6711STRPbF l l l l l l l l l RoHS Compliant and Halogen Free Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra.

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IRF6711STRPBF Power MOSFET International Rectifier

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IRF6711STRPBF Features

IRF6711STRPBF General Description

Datasheet Details

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