IRF6714MPbF Datasheet (International Rectifier)

IRF6714MPbF, Power MOSFET

The IRF6714MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.

The DirectFET package is compatible with existing layout geometries us

PD - 96130A IRF6714MPbF IRF6714MTRPbF DirectFET Power MOSFET l RoHs Compliant and Halogen Free l Low Profile (<0.6 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 25V max ±20V max 1.6mΩ@ 10V 2.6mΩ@ 4.5V l Optimized for High Frequency Switching Qg tot l Ideal for CPU Core DC-DC Converters l Optimized for Sync.

FET socket of Sync.

Buck Converter 29nC Qgd 8.3nC Qgs2 4.1nC Qrr 36nC Qoss

IRF6714MPbF Features

* Fig11. MVDaxSi,mDuramin-tSo-aSfoeuOrcepeVroaltatigneg(VA) rea ID, Drain Current (A) EAS , Single Pulse Avalanche Energy (mJ) 180 160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 800 700 600 500 Typical VGS(th) Gate th