IRF6714MPbF

Power MOSFET

International Rectifier

IRF6714MPbF Features

* Fig11. MVDaxSi,mDuramin-tSo-aSfoeuOrcepeVroaltatigneg(VA) rea ID, Drain Current (A) EAS , Single Pulse Avalanche Energy (mJ) 180 160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 800 700 600 500 Typical VGS(th) Gate th

IRF6714MPbF General Description

The IRF6714MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries us.

IRF6714MPbF Datasheet (245.11 KB)

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Datasheet Details

Part number:

IRF6714MPbF

Manufacturer:

International Rectifier

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245.11 KB

Description:

Power mosfet.
PD - 96130A IRF6714MPbF IRF6714MTRPbF DirectFET Power MOSFET l RoHs Compliant and Halogen Free l Low Profile (<0.6 mm) l Dual Sided Cooling Co.

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IRF6714MPbF Power MOSFET International Rectifier

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IRF6714MPbF Features

IRF6714MPbF General Description

Datasheet Details

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