IRF6717MPBF, IRF6717MTRPBF Datasheet - International Rectifier

IRF6717MPBF N-Channel HEXFET Power MOSFET

The IRF6717MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries use.

PD - 97345C IRF6717MPbF IRF6717MTRPbF DirectFET Power MOSFET l RoHs Compliant and Halgen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 25V max ±20V max 0.95m@ 10V 1.6m@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 46nC 14nC 6.6nC 31nC 35nC 1.8V l Optimized for Sync. FET socket of Sync. Buc.

IRF6717MTRPBF_InternationalRectifier.pdf