IRF6718L2TRPBF Datasheet - International Rectifier

IRF6718L2TRPBF DirectFET Power MOSFET

The IRF6718L2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a D-pak. The DirectFET package is compatible with existing layout geometries used in power applicatio.

PD - 97395E IRF6718L2TRPbF l RoHS Compliant Containing No Lead and Bromide l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Very Low RDS(ON) for Reduced Conduction Losses l Optimized for Active O-Ring / Efuse Applications l Compatible with existing Surface Mount Techniques IRF6718L2TR1PbF DirectFET® Power MOSFET Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 25V max ±20V max 0.50mΩ@10V 1.0mΩ@4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 64nC 2.

IRF6718L2TRPBF_InternationalRectifier.pdf