IRF6724MPBF Power MOSFET

International Rectifier

Description

PD -97131A IRF6724MPbF IRF6724MTRPbF RoHs Compliant and Halogen Free VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 30V max ±20V max 1.9mΩ@ 10V 2.
The IRF6724MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state res.

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Datasheet Specifications

Part number: IRF6724MPBF
Manufacturer: International Rectifier
File Size: 282.72 KB
Datasheet: IRF6724MPBF_InternationalRectifier.pdf
Description: Power MOSFET

Features

* to-Drain Voltage (V) 1msec 0.1 10.0 100.0 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) 150 2.5 Fig11. Maximum Safe Operating Area ID, Drain Current (A) 2.0 100 ID = 100µA 1.5 50 1.0 0 25 50 75 100 125 150 TC

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

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IRF6724MPBF Power MOSFET International Rectifier

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